Quantum dot memory based on longitudinal double barrier resonant tunneling structure |
Title: |
Quantum dot memory based on longitudinal double barrier resonant tunneling structure |
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Application Number: |
200410091126 |
Application Date: |
2004/11/19 |
Announcement Date: |
2005/04/06 |
Pub. Date: |
2006/12/20 |
Publication Number: |
1604331 |
Announcement Number: |
1291497 |
Grant Date: |
2006-12-20 |
Granted Pub. Date: |
2006-12-20 |
ApplicationType: |
Invention |
State/Country: |
11[China|beijing] |
IPC: |
H01L 27/10 |
Applicant(s): |
Tsinghua University |
Inventor(s): |
Deng Ning, Chen Peiyi, Pan Liyang |
Key Words: |
Quantum dot memory, longitudinal double barrier, resonant tunneling structure |
Abstract: |
This invention relates to a quantum spots memory based on longitudinal double-barrier resonance cross structure and belongs to semi-conductor device design field. The basic structure comprises the multiple structures, source and drain electrodes orderly grown in the Si underlay. It is characterized by the following: the multiple structures comprise control grating electrode, quantum float grating layer, double-barrier resonance cross layer and SiGe channel. |
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Relevancy information |
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Last Update |
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2008-4-17 |
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Selected patents owned by Tsinghua University filed in 2005 are loaded. |
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2008-3-31 |
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Selected patents owned by Tsinghua University filed in 2006 and 2007 are load. |
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