Quanta dot active region structure of broad spectrum white light LED and epitaxial growth method thereof
Title：
Quanta dot active region structure of broad spectrum white light LED and epitaxial growth method thereof
Application Number：
 200410009267
Application Date：
 2004/06/25
Announcement Date：
 2005/03/16
Pub. Date：
Publication Number：
 1595670
Announcement Number：
Grant Date：
Granted Pub. Date：
ApplicationType：
 Invention
State/Country：
 11[China|beijing]
IPC：
 H01L 33/00
Applicant(s)：
 Tsinghua University
Inventor(s)：
 Luo Yi, Shao Jiaping, Han Yanjun
Key Words：
 Quanta dot, active region structure, broad spectrum, white light, LED, epitaxial growth method
Abstract：
 The invention relates to a quantum point active area structure of wide spectral white light LED and its growing method, based semiconductor power-typed light emitting diode of gallium nitride III/V group compounds, metal organic chemistry gas sediment growing method and relative active area structure design of white light power-typed spectral light emitting diode LED material with use solid state light source whose active area contains indium-gallium-nitrogen- gallium-nitrogen or quantum point of indium-gallium-nitrogen- gallium-nitrogen structure. It supplies several kinds of new machinery structure design based on InGaN quantum point active area, and core growth parameter of condition for extension such as flux of reaction source, V/III ratio and temperature of substrate. The invention can realize transformation without fluorescence, high color-rendering index and luminance requirement of highly luminous GaN white light LED, also, it is suitable for(CdSe) ZnS/ZnSe, (Zn, Cd)Se/ZnSe, (Zn, Cd, Hg)(Se,Te)/ZnSe, (Zn,Cd,Hg)(Se,Te)/ZnS and other II/VI group compounds semiconductor containing quantum point of spectral power-typed light emitting diode material growing, whose main light emitting diode is them same with that of III/V InGaN group quantum point 21 .
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2008-4-17
  Selected patents owned by Tsinghua University filed in 2005 are loaded.
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