Amorphous carbon membrane/n type silicon bidirectional voltage induction switch
Title:
Amorphous carbon membrane/n type silicon bidirectional voltage induction switch
Application Number:
200410049729
Application Date:
2004/06/25
Announcement Date:
2005/03/16
Pub. Date:
Publication Number:
1595658
Announcement Number:
Grant Date:
Granted Pub. Date:
ApplicationType:
Invention
State/Country:
11[China|beijing]
IPC:
H01L 29/00, H01L 29/861
Applicant(s):
Tsinghua University
Inventor(s):
Zhang Xiaozhong, Xue Qingzhong
Key Words:
Amorphous carbon membrane, n type silicon, bidirectional voltage, induction switch
Abstract:
Disclosed is a amorphous carbon film/n-typed bi-directional voltage induced switch made by PLD method which belongs to electrical transducer. On the n-typed Si(100) substrate, use graphite for cold pressing in the condition of Ar of 3-5 Pa, use PLD method to make amorphous carbon film/ n-typed silicon, weld two electrodes on amorphous carbon film, and form a simple bi-directional voltage induced switch after linking a voltage trigger. Under the condition of willing temperature, the amorphous carbon film/n-typed silicon bi-directional voltage induced switch has the function of bi-directional voltage induced switch, (which is when the voltage reaching a certain value, electric current suddenly increasing) and the induced voltage of positive direction and negative direction are different, the induced voltage decreases with the increase of temperature. When the switch has the temperature of 310K, the induced voltage are only 0.0138V and -0.0041V, suitable for microelectronic device.
Claim:
Priority:
PCT:
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