Room temperature electroluminescent silicon base Fabry-Perot micro chamber device
Title：
Room temperature electroluminescent silicon base Fabry-Perot micro chamber device
Application Number：
 200410071151
Application Date：
 2004/07/30
Announcement Date：
 2005/03/02
Pub. Date：
Publication Number：
 1589076
Announcement Number：
Grant Date：
Granted Pub. Date：
ApplicationType：
 Invention
State/Country：
 11[China|beijing]
IPC：
 H05B 33/22, H05B 33/14, H05B 33/26, H05B 33/12, C09K 11/06
Applicant(s)：
 Tsinghua Univ.
Inventor(s)：
 Yue Ruifeng, Yao Yongzhao, Dan Yaping
Key Words：
 Room temperature, electroluminescent, silicon base, Fabry-Perot, micro chamber device
Abstract：
 This invention relates to a room-temperature electroluminescence silcon Fabry-Perot micro-control device incuding applying transparent material as the substrate, a Brag-reflector formed by two interleaved films made of two periodically deposited materials with high and low refractive index on the substrate, depositing a silicon electroluminescence layer on the Brag-reflector. The silicon electroluminescence layer is composed an orderly deposited transparent positive electrode film, p type a-SiCxiH film, a p-I junction luminous structure formed by intrinsic a-SiCx: H films and high reflective negative electrode.
Claim：
Priority：
PCT：
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2008-4-17
  Selected patents owned by Tsinghua University filed in 2005 are loaded.
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