Driving protective circuit for inverse resistance type insulated gate bipolar transistor
Title：
Driving protective circuit for inverse resistance type insulated gate bipolar transistor
Application Number：
 200410068841
Application Date：
 2004/07/09
Announcement Date：
 2005/03/02
Pub. Date：
Publication Number：
 1588799
Announcement Number：
Grant Date：
Granted Pub. Date：
ApplicationType：
 Invention
State/Country：
 11[China|beijing]
IPC：
 H03K 17/08, H02H 7/122
Applicant(s)：
 Tsinghua Univ.
Inventor(s)：
 Zhou Daning, Liu Zhichao, Huang Lipei
Key Words：
 Driving protective circuit, inverse resistance type, insulated gate, bipolar transistor
Abstract：
 This invented driving protection circuit for inverse impadance insulated-gate bipolar transistor is composed of: (1). a controller; (2). a three-section driving circuit, comprising a dynamic charging current source, a dynamic discharging current source a push-pull amplifier circuit series connected with them; (3). a detecting circuit, when the device being of power-on, it cotnrols the rising-rate of the current at the collector; on the other hand, when power-off, it controls the rising-rate of the voltage at the collector; and (4). a RB-IGBT over-current protection circuit for V(Ce) detection, being connected to the collector of said inverse impadance insulated-gate bipolar transistor. It has two V(Ce) detection schemes.
Claim：
Priority：
PCT：
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2008-4-17
  Selected patents owned by Tsinghua University filed in 2005 are loaded.
2008-3-31
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