CMOS inductance capacitance resonant cavity voltage-controlled oscillator with ultra-low voltage
Title：
CMOS inductance capacitance resonant cavity voltage-controlled oscillator with ultra-low voltage
Application Number：
 200510086991
Application Date：
 2005/11/25
Announcement Date：
 2006/05/03
Pub. Date：
Publication Number：
 1767371
Announcement Number：
Grant Date：
Granted Pub. Date：
ApplicationType：
 Invention
State/Country：
 11[China|beijing]
IPC：
 H03B 5/12, H03L 7/099
Applicant(s)：
 Tsinghua University
Inventor(s)：
 Mao Xiaojian, Yang Huazhong, Wang Hui
Key Words：
 CMOS, inductance capacitance, resonant cavity, voltage-controlled oscillator, ultra-low voltage
Abstract：
 The invention is in the field of voltage-controlled oscillator technology. It is characterized in that it connects the two N-type MOS pipe substrates with the anode polar and the cathode polar of the power to reduce the transistor valve value to achieve the super low voltage inductance capacity oscillator; one connecting point of the interconnected inductance capacity is connected with the two N-type MOS pipe substrates. The working voltage can lower to 0.4V and the average current can be 2.6mA on the SMIC 0.18 mm craft condition.
Claim：
Priority：
PCT：
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2008-4-17
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