Silicon base CMOS radio frequency integrated circuit substrate and its manufacturing method |
Title： |
| Silicon base CMOS radio frequency integrated circuit substrate and its manufacturing method |
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Application Number： |
200510086987 |
Application Date： |
2005/11/25 |
Announcement Date： |
2006/06/28 |
Pub. Date： |
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Publication Number： |
1794453 |
Announcement Number： |
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Grant Date： |
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Granted Pub. Date： |
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ApplicationType： |
Invention |
State/Country： |
11[China|beijing] |
IPC： |
H01L 27/092, H01L 27/082, H01L 21/8238, H01L 21/8222 |
Applicant(s)： |
Tsinghua Univ. |
Inventor(s)： |
Zhao Jiahao, Zhu Jing |
Key Words： |
Silicon base, CMOS radio frequency, integrated circuit substrate, manufacturing method |
Abstract： |
This invention relates to a silicon based CMOS RF IC substrate and its manufacturing method, which is integrated by CMOS digital IC and high quality RF passive devices and circuits on a heavy doped low resistivity silicon chip, in which, the substrate contains a heavy doped low resistivity silicon chip divided into a and b kinds of patternized regions and said a kind has a patternized SiO of a patternized vertical nm structure covered with a layer of SiO2, SiN4 and polymide. |
Claim： |
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Priority： |
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PCT： |
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LegalStatus： |
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