Longitudinal quantum polka-dot floating grid tip structure, preparing method and storage thereof
Title：
Longitudinal quantum polka-dot floating grid tip structure, preparing method and storage thereof
Application Number：
 200510012184
Application Date：
 2005/07/15
Announcement Date：
 2005/12/21
Pub. Date：
 2007/12/19
Publication Number：
 1710722
Announcement Number：
 100356585
Grant Date：
 2007-12-19
Granted Pub. Date：
 2007-12-19
ApplicationType：
 Invention
State/Country：
 11[China|beijing]
IPC：
 H01L 29/788, H01L 27/115, H01L 21/336, H01L 21/824
Applicant(s)：
 Tsinghua Univ.
Inventor(s)：
 Chen Peiyi, Deng Ning, Liu Zhihong, Pan Lihe, Wei Rongshan
Key Words：
 Longitudinal, quantum polka-dot floating grid, tipstructure, preparing method, storage
Abstract：
 Belonging to technical area of designing memory, the method includes following steps: preparing SiGe quantum point on Si substrate; epitaxial growth of silicon film from SiGe quantum point; dry-oxygen oxidation, above quantum point, forming longitudinal self-aligned drop pit to quantum point; depositing polysilicon floating grid on layer of oxide so as to form tip structured floating grid self-aligned to SiGe quantum point. The invention also disclosed memory of using the said structured memory. The structure raises tunneling current density. Being applicable to nonvolatile memory, the invention lowers operating voltage, average electric field of tunneling layer of oxide, and raises reliability of memory in time of not reducing thickness of layer of oxide.
Claim：
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PCT：
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2008-4-17
  Selected patents owned by Tsinghua University filed in 2005 are loaded.
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