No-antenna photoelectric integrated sensor for strong electric field measurement
Title：
No-antenna photoelectric integrated sensor for strong electric field measurement
Application Number：
 200610012162
Application Date：
 2006/06/09
Announcement Date：
 2006/11/08
Pub. Date：
Publication Number：
 1858602
Announcement Number：
Grant Date：
Granted Pub. Date：
ApplicationType：
 Invention
State/Country：
 11[China|beijing]
IPC：
 G01R 29/12, G01R 19/00
Applicant(s)：
 Tsinghua Univ.
Inventor(s)：
 Chen Weiyuan, Zeng Rong, He Jinliang
Key Words：
 strong electric field, measurement, no-antenna, photoelectric integrated, sensor
Abstract：
 This invention relates to an antenna-free photoenectric integrated sensor for testing strong field, in which, a wafer with photoelectric effect is applied, optical waveguides of Y-shape at both ends and parallel mutually at the middle are formed on the surface of the wafer by a Ti spreading method or a proton exchange method, an electrode is set above a section of the two parallel waveguides, the width ratio of them is 2-30:1 and the length ratio is 1-0.05:1, which can meet the measurement to strong fields(greater than 200V/m).
Claim：
Priority：
PCT：
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