Full complementary MOS exhaustion region condenser network aimed at low voltage application
Title：
Full complementary MOS exhaustion region condenser network aimed at low voltage application
Application Number：
 200710118648
Application Date：
 2007/07/11
Announcement Date：
 2008/01/02
Pub. Date：
Publication Number：
 101098137
Announcement Number：
Grant Date：
Granted Pub. Date：
ApplicationType：
 Invention
State/Country：
 11[China|beijing]
IPC：
 H03K 17/687H01L 27/092H01L 23/522
Applicant(s)：
 Tsinghua University
Inventor(s)：
 Sun Yihe, Yin Shujuan
Key Words：
 Full complementary, MOS, condenser network, low voltage
Abstract：
 The invention discloses a full-compensation MOS exhaustion capacitor circuit with low-voltage application, belonging to full-digit capacitor design technical field in integrated circuit, wherein the capactiro circuit is substantially composed of five PMOS tubes M1-M5, and one NOMOS tube M6. The invention realizes the full-compensation MOS exhaustion capacitor with high linearity and low-temperature correlation at low voltage in deep sub micrometer design, while the full-digit design can reduce design cost. The invention can realize switch capacitor via full-digit technique without additional cost, at low voltage of deep sub micrometer technique.
Claim：
Priority：
PCT：
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2008-4-17
  Selected patents owned by Tsinghua University filed in 2005 are loaded.
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