High-dielectric constant and reduction resistant dielectric material for capacitor with basic-metal electrode |
Title: |
High-dielectric constant and reduction resistant dielectric material for capacitor with basic-metal electrode |
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Application Number: |
02146520 |
Application Date: |
2002/10/21 |
Announcement Date: |
2003/03/19 |
Pub. Date: |
2006/06/07 |
Publication Number: |
1404081 |
Announcement Number: |
1258783 |
Grant Date: |
2006-6-7 |
Granted Pub. Date: |
2006-6-7 |
ApplicationType: |
Invention |
State/Country: |
11[China|beijing] |
IPC: |
H01G 4/12, H01B 3/12, C04B 35/00 |
Applicant(s): |
Tsinghua Univ. |
Inventor(s): |
Wang Xiaohui, Wang Yongli, Ma Zhenwei |
Key Words: |
High-dielectric constant, reduction resistant, dielectric material, capacitor, basic-metal electrode |
Abstract: |
The present invention is capacitor dielectric material with high dielectric constant and high reduction resistance. The main components of the dielectric material includes solid solution Bax(ZrySnzTi1-x-y)O3 of BaTiO3, BaZrO3, and BaSnO3, secondary additive and at least one kind of RE oxide, which are two-section sintered at 1000-1350 deg.c into Y5V type dielectric material with excellent dielectric performance and microstructure. The electric material has room temperature dielectric constant of 8000-15000, temperature variation of capacitance of -82 % to +22%, room temperature dielectric loss less than or equal to 2.5%, AC puncture electric field strength higher than 4.5 KV/mm and ceramic crystal size of 500-2500 nm. |
Claim: |
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Priority: |
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PCT: |
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LegalStatus: |
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