V-doped ZnO thin-film material with large piezoelectric constant and high resistivity
Title：
V-doped ZnO thin-film material with large piezoelectric constant and high resistivity
Application Number：
 200710121299
Application Date：
 2007/09/03
Announcement Date：
 2008/02/06
Pub. Date：
Publication Number：
 101118948
Announcement Number：
Grant Date：
Granted Pub. Date：
ApplicationType：
 Invention
State/Country：
 11[China|beijing]
IPC：
 H01L 41/18H03H 9/02
Applicant(s)：
 Tsinghua University
Inventor(s)：
 Pan Feng, Yang Yuchao, Zeng Fei, Song Cheng
Key Words：
 V-doped, ZnO, thin-film material, piezoelectric constant, resistivity
Abstract：
 The present invention discloses a ZnO film material which has a large piezoelectricity constant and a high electric resistivity. The present invention is a ZnO film material which has a piezoelectricity constant d33 of fifty five to one hundred and ten Pc/N and a high resistivity which is more than one thousand and eleven Omega-cm. The present invention utilizes V impurity to changes the ZnO and the piezoelectricity capability is enhanced as the ZnO film produces the iron electricity after adding impurity; moreover the preferred orientation of the c axis is enhanced; the lattice parameter of the film is reduced and the equal atom electricity number is enhanced to enhance the piezoelectricity. As the 3d layer of the V4+ or V5+ ion has a plurality of empty energy statuses, the present invention can get the free electron in the film; the present invention has a simple structure and a low cost. And the present invention shows a large piezoelectricity constant and a high electric resistivity in constant temperature after the ZnO film is improved with impurity.
Claim：
Priority：
PCT：
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