Low-temperature plasma grafting infiltration vaporization membrane and its preparing method |
Title： |
| Low-temperature plasma grafting infiltration vaporization membrane and its preparing method |
|
Application Number： |
200410015893 |
Application Date： |
2004/01/16 |
Announcement Date： |
2004/12/29 |
Pub. Date： |
|
Publication Number： |
1557533 |
Announcement Number： |
|
Grant Date： |
|
Granted Pub. Date： |
|
ApplicationType： |
Invention |
State/Country： |
31[China|shanghai] |
IPC： |
B01D 53/22, B01D 71/78 |
Applicant(s)： |
Shanghai Mega Vision Membrane Technology & Engineering Co., Ltd. |
Inventor(s)： |
Chen Cuixian, Li Jiding, Liu Shoushan |
Key Words： |
Low-temperature plasma, grafting, infiltration vaporization membrane, preparing method |
Abstract： |
The preparation process of low temperature plasma grafting and evaporating film includes the following steps: preparing asymmetrical structure ultrafiltering film; pre-treating the asymmetrical structure ultrafiltering film; purifying grafted monomer; preparing plasma emitting system, deairing and argon replacing; surface argon plasma glowing discharge and irradiation of asymmetrical structure ultrafiltering film; plasma grafting reaction; and post-treatment of the film. The present invention features selecting PAN as material for preparing asymmetrical structure ultrafiltering film, selecting MAA and HEMA as grafting monomer, selecting argon plasma in processing the surface of PAN film and plasma frequency of 13.56 MHz. The present invention has the beneficial effects of excellent selectivity and high permeating flux of the film, etc. |
Claim： |
|
Priority： |
|
PCT： |
|
LegalStatus： |
|
Relevancy information
