Nanometer SiC powder preparing process
Title：
Nanometer SiC powder preparing process
Application Number：
 200410103488
Application Date：
 2004/12/30
Announcement Date：
 2005/07/13
Pub. Date：
 2007/03/14
Publication Number：
 1636870
Announcement Number：
 1304286
Grant Date：
 2007-3-14
Granted Pub. Date：
 2007-3-14
ApplicationType：
 Invention
State/Country：
 11[China|beijing]
IPC：
 C01B 31/36
Applicant(s)：
 Tsinghua Univ.
Inventor(s)：
 Shi Limin, Zhao Hongsheng, Tang Chunhe
Key Words：
 Nanometer SiC powder, preparing process
Abstract：
 The present invention is micron SiC powder preparing process, and belongs to the field of inorganic material preparing technology. Si source material of grain size smaller than 15 microns, C source material and alcohol in certain mass proportion are first mixed; and the mixture is then high temperature carbonized and high temperature sintered to obtain SiC powder in granularity of micron level, submicron level or even nanometer level. The technological process has low cost, and is simple and suitable for large scale production.
Claim：
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2008-4-17
  Selected patents owned by Tsinghua University filed in 2005 are loaded.
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