C/Co/Si multilayer coating material with room temperature low field huge magnetic risistance effect
Title：
C/Co/Si multilayer coating material with room temperature low field huge magnetic risistance effect
Application Number：
 200410074735
Application Date：
 2004/09/14
Announcement Date：
 2005/03/02
Pub. Date：
Publication Number：
 1588663
Announcement Number：
Grant Date：
Granted Pub. Date：
ApplicationType：
 Invention
State/Country：
 11[China|beijing]
IPC：
 H01L 43/08, H01L 43/10
Applicant(s)：
 Tsinghua Univ.
Inventor(s)：
 Zhang Xiaozhong, Tan Guotai, Xue Qingzhong
Key Words：
 C/Co/Si, multilayer coating material, room temperature, low field, huge magnetic, risistance effect
Abstract：
 The invention provides a C/Co/Si multilayer film material has room temp. low field direct magnetic risistance efficiency in magnetics quantity sensor material. Laser pulse depositing method is used to deposit a layer of Co and a layer of C film on n-Si(100) base board. Direct magnetic risistance effect can reach +35.3 percent on condition of room temp. and 0.01 T applied magnetic field.
Claim：
Priority：
PCT：
LegalStatus：

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2008-4-17
  Selected patents owned by Tsinghua University filed in 2005 are loaded.
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