Ferroelectric domain array structure, and its preparing method and ferroelectric film having same
Title：
Ferroelectric domain array structure, and its preparing method and ferroelectric film having same
Application Number：
 200510037511
Application Date：
 2005/09/23
Announcement Date：
 2007/03/28
Pub. Date：
Publication Number：
 1937274
Announcement Number：
Grant Date：
Granted Pub. Date：
ApplicationType：
 Invention
State/Country：
 11[China|beijing]
IPC：
 H01L 41/187, H01L 41/24, C04B 35/00
Applicant(s)：
 Tsinghua Univ.
Inventor(s)：
Key Words：
 Ferroelectric domain array structure, preparing method, ferroelectric film
Abstract：
 The ferroelectric domain array structure includes multiple pieces of structure of ferroelectric domain, which are in Nano level of diameter, and are arranged inside a ferroelectric ultrathin film in mode of triangle close pack. The invention includes the method for preparing the structure. Applying an electric field in prearranged intensity perpendicular to surface of ferroelectric ultrathin film generates a structure of ferroelectric domain in self-organization of ferroelectric domain inside ferroelectric ultrathin film under polarized action of the electric field applied. The technique for preparing the structure of ferroelectric domain is simple, and the structure in Nano level. In addition, the invention also discloses ferroelectric film with the disclosed structure.
Claim：
Priority：
PCT：
LegalStatus：

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2008-4-17
  Selected patents owned by Tsinghua University filed in 2005 are loaded.
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