Automatic controlling method for increasing AIN medium film reaction direct current sputtering speed |
Title： |
| Automatic controlling method for increasing AIN medium film reaction direct current sputtering speed |
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Application Number： |
200710118133 |
Application Date： |
2007/06/29 |
Announcement Date： |
2007/11/28 |
Pub. Date： |
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Publication Number： |
101078105 |
Announcement Number： |
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Grant Date： |
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Granted Pub. Date： |
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ApplicationType： |
Invention |
State/Country： |
11[] |
IPC： |
C23C 14/52C23C 14/06G05B 19/04 |
Applicant(s)： |
Tsinghua University |
Inventor(s)： |
Wang Jian, Yin Zhiqiang, Luo Yi, Qi Jing, Zhang Jian |
Key Words： |
Automatic control, direct current, sputtering speed, AIN, medium film |
Abstract： |
An automatic control method for improving the reaction dc sputtering speed of AIN medium film, which belongs to vacuum solid film facture technology field. During sputtering process, N2 reacts with Al butt surface to generate AlN, a control system sets the dividing voltage value PN of N2 of the reaction chamber, the control system also measures the air pressure PAr of the reaction chamber which only allows Ar plasm pass through, and N2 is pumped into the chamber to implement reaction sputtering; to adjust N2 input flow amount based on the setting N2 dividing voltage, when the actual air pressure P of the reaction chamber is above to the sum of PN and PAr, N2 is excessive, a controller reduces N2 input flow; when the air pressure P of the reaction chamber is below to the sum of PN and PAr, N2 is deficient, the controller increases N2 input flow. The present invention also provides a automatic control system which improves the reaction dc sputtering speed of AIN medium film based on N2 dividing voltage control. The present invention makes the dividing voltage PN of the remainder N2 steady with a relative low value, which ensures the AlN purity in the film, also possesses a higher sputtering speed. |
Claim： |
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