Ferroelectric ZnO thin film doped with V and preparation method thereof
Title：
Ferroelectric ZnO thin film doped with V and preparation method thereof
Application Number：
 200710118962
Application Date：
 2007/06/15
Announcement Date：
 2008/01/16
Pub. Date：
Publication Number：
 101104566
Announcement Number：
Grant Date：
Granted Pub. Date：
ApplicationType：
 Invention
State/Country：
 11[China|beijing]
IPC：
 C04B 41/50C23C 14/34
Applicant(s)：
 Tsinghua University
Inventor(s)：
 Pan Feng, Yang Yuchao, Zeng Fei, Song Cheng
Key Words：
 Ferroelectric, ZnO, thin film, preparation method
Abstract：
 A V-doped ZnO thin film provided with ferroelectricity and the preparation method belong to the memorizer material preparation field, in particular to the preparation of ferroelectric thin film materials. In the composition of the film, the content of V is 0.2 to 2.0at %, and the total content of Zn and V is 50at %, and the rest is zero; the thin film can be prepared through reactive sputtering; the target material needed in the preparation is the composite target of pure zinc and pure vanadium; the contact area of vanadium and zinc target account for 4 to 9.5 per cent of the zinc target area; the reaction gas is pure argon and pure oxygen; the ratio of argon to oxygen ranges from 1: 3 to 1:1; the background vacuum pressure is less than 5*10-4Pa; the total pressure of the sputtering gas is 0.8 Pa; the substrate temperature is 100 to 500 DEG C. The film shows better remaining polarization at room temperature, and is provided with preferred orientation along the c-axis direction, good adhesion performance on the silicon substrate and good dielectric property.
Claim：
Priority：
PCT：
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