Process for preparing large-area zinc oxide film with nano lines by physical gas-phase deposition
Title：
Process for preparing large-area zinc oxide film with nano lines by physical gas-phase deposition
Application Number：
 02125215
Application Date：
 2002/07/17
Announcement Date：
 2003/02/12
Pub. Date：
 2006/04/19
Publication Number：
 1396300
Announcement Number：
 1252311
Grant Date：
 2006-4-19
Granted Pub. Date：
 2006-4-19
ApplicationType：
 Invention
State/Country：
 11[China|beijing]
IPC：
 C23C 14/08, C23C 14/26
Applicant(s)：
 Tsinghua Univ
Inventor(s)：
 Liu Jun, Zhang Xiaozhong, Zhang yingjiu
Key Words：
 preparing process, large-area, zinc oxide film, nano lines, physical gas-phase deposition
Abstract：
 A process for preparing large-area nanometre-class linear film layer by gas-phase deposition includes such steps as putting the powdered zinc oxide in a tubular furnace, heating to reaction temp. under protection of gas, holding the temp. for over 0.5 hr, and natural cooling to obtain a nanometre-class film layer on silicon substrate. Its advantages are high uniformity and purity, and low cost.
Claim：
Priority：
PCT：
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