Superlattice nano device and its manufacturing method |
Title： |
| Superlattice nano device and its manufacturing method |
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Application Number： |
200510034359 |
Application Date： |
2005/04/22 |
Announcement Date： |
2006/10/25 |
Pub. Date： |
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Publication Number： |
1850580 |
Announcement Number： |
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Grant Date： |
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Granted Pub. Date： |
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ApplicationType： |
Invention |
State/Country： |
11[China|beijing] |
IPC： |
B82B 1/00, B82B 3/00 |
Applicant(s)： |
Tsinghua Univ. |
Inventor(s)： |
Yao Yuan, Chu Weiguo, Fan Shoushan |
Key Words： |
Superlattice, nano device, manufacturing method |
Abstract： |
The invention is about a super lattice nano device which includes at least one building block. The block includes: the first electric pole which includes a basis and the one-dimensional nanometer structure; the functional layer located on the basis and round the nanometer structure; the second electric pole which insulates to the first pole, round the functional layer. The invention is to deposit many layers of membrane structure in the side of the one-dimensional nanometer structure to get the super lattice nano device, so it can include the technology of producing the two-dimensional super lattice material and avoid the disadvantage of forming the alloy or the sosoloid by super lattice material and the metal catalyst in the technology of producing nanometer line by the VLS. |
Claim： |
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Priority： |
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PCT： |
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LegalStatus： |
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