Monocrystalline Si3N4 nanometer belt and micro belt preparation method
Title：
Monocrystalline Si3N4 nanometer belt and micro belt preparation method
Application Number：
 200510012188
Application Date：
 2005/07/15
Announcement Date：
 2006/05/10
Pub. Date：
 2007/07/18
Publication Number：
 1769547
Announcement Number：
 1327046
Grant Date：
 2007-7-18
Granted Pub. Date：
 2007-7-18
ApplicationType：
 Invention
State/Country：
 11[China|beijing]
IPC：
 C30B 29/62, C30B 29/38
Applicant(s)：
 Tsinghua University
Inventor(s)：
 Xie Zhipeng, Yang Weiyou, Miao Hezhuo, An Linan
Key Words：
 Monocrystalline, Si3N4, nanometer belt, micro belt, preparation method
Abstract：
 This invention relates to the single crystal Si3N4 namometer strip and micron strip making method, which belongs to the material preparation technology field. This invention uses the organic van to pyrolise the compound single crystal Si3N4 namometer strip and micron strip, which comprises the following steps: (1) joint solidifying under low temperature: using the polysiloxanes as the original material, keeping temperature at 240-290¡æ in the nitrogen or ammonia to joint solidify to obtain the semitransparent non-crystal state SiCN solid; (2) high-performance ball crocus: grinding the semitransparent SiCN solid in the high-performance ball grinder, and adding activator, wherein the said activator is any one in the FeCl2, Al, Cu, Ni, Fe, the dosage is 1-5wt£¥;(3) Pyrogenation under high temperature: decomposing the grinded high-performance ball under high temperature, keeping the temperatue between 1250¡æ and 1550¡æ. This technology is simple and has a strong controlling performance, the pure degree of the compound output is high, it can prepare various types namometer material, such as namometer line, namometer strip, namometer bar and so on.
Claim：
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2008-4-17
  Selected patents owned by Tsinghua University filed in 2005 are loaded.
2008-3-31
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