Method for controlling growth of carbon nanotube by ion Injection surface modification
Title：
Method for controlling growth of carbon nanotube by ion Injection surface modification
Application Number：
 200510098717
Application Date：
 2005/09/07
Announcement Date：
 2006/04/26
Pub. Date：
Publication Number：
 1763243
Announcement Number：
Grant Date：
Granted Pub. Date：
ApplicationType：
 Invention
State/Country：
 11[China|beijing]
IPC：
 C23C 16/26, C23C 16/44, C23C 14/48
Applicant(s)：
 Tsinghua University
Inventor(s)：
 Zhang Zhengjun, Yue Yang, Liu Chao
Key Words：
 ion Injection, surface modification, carbon nanotube, growth, controlling method
Abstract：
 The present invention belongs to the field of nanometer material preparing technology, and is one ion implantation process for surface modification to control carbon nanotube growth. The ion implantation process has inert gas as the particle source. During the preparation or carbon nanotube, clean silicon substrate is first covered with proper mask and set inside ion implantation equipment, and ion implantation is then performed after regulating implanted particle variety, implantation energy and implanted particle number. The treated silicon substrate is set inside tubular vacuum quartz furnace, and carbon nanotube is prepared by means of chemical vapor deposition with ferrocene and xylene as reactants. The said process can obtain selectively grown carbon nanotube on the ion implantation modified silicon substrate, alter surface form of the silicon substrate and control the 2D growth of carbon nanotube. The present invention has wide application foreground in making nanometer electronic devices, field emitting device, etc.
Claim：
Priority：
PCT：
LegalStatus：

Recommend this patent:
1 2 3 4 5
Average ( 0 votes):
                                                                          Recommended Patents>>

Relevancy information

Growth appts. of carson nanotube array and growth method of multi-wall carbon nanotube array


Other Patents of Same Inventor

Method for developping directionally aligning carbon nanometer tube array on silicon substrate
Method for developping directionally aligning zinc oxide nanometer rod array on silicon substrate
Method for developping monocrystalline iron nanometer thread on silicon substrate
Body centred cubic configuration vanadium pentoxide nanometer material preparation method
Method for controlling carbon nanometer tube three-dimension graphics type growth by spray plating precious metal membrane



News & Events More>>

Last Update  
2008-4-17
  Selected patents owned by Tsinghua University filed in 2005 are loaded.
2008-3-31
  Selected patents owned by Tsinghua University filed in 2006 and 2007 are load.







Copyright 2008-2015 All Rights Reserved Patent License of China.      Designed by Easygo