Preparation method of silicon and silicon germanium quantum point array |
Title： |
| Preparation method of silicon and silicon germanium quantum point array |
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Application Number： |
200510011796 |
Application Date： |
2005/05/27 |
Announcement Date： |
2006/01/25 |
Pub. Date： |
2007/06/20 |
Publication Number： |
1725438 |
Announcement Number： |
1322548 |
Grant Date： |
2007-6-20 |
Granted Pub. Date： |
2007-6-20 |
ApplicationType： |
Invention |
State/Country： |
11[China|beijing] |
IPC： |
H01L 21/00, H01L 33/00, H01S 5/00, B82B 3/00 |
Applicant(s)： |
Tsinghua Univ. |
Inventor(s)： |
Huang Zhipeng, Wu Yin, Zhu Jing |
Key Words： |
silicon, silicon germanium, quantum point array, preparation method |
Abstract： |
A preparation method for Si and SiGe quantum spot array includes: carrying out acetone vibration cleaning, alcohol vibration cleaning piranha solution and RCA solution process orderly to a silicon chip or silicon chip deposited with a SiGe film then dropping the styroflex small ball solution with the quality percentage concentration sphere of 0.01-0.9% into the surface cleaned silicon chip or that with SiGe film to be put in air for natural drying then to be heat-insulated under 90-110deg.C for 1-6min and depositing an Ag film of 25-100nm on the substrate wit a vacuum plating instrument, immersing the deposited Ag film sample in the etching solution of hydrofluoric acid and ferric nitrate for process. |
Claim： |
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Priority： |
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PCT： |
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LegalStatus： |
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