Growth method for single-wall carbon nano-tube |
Title： |
| Growth method for single-wall carbon nano-tube |
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Application Number： |
200610061618 |
Application Date： |
2006/07/12 |
Announcement Date： |
2008/01/16 |
Pub. Date： |
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Publication Number： |
101104513 |
Announcement Number： |
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Grant Date： |
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Granted Pub. Date： |
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ApplicationType： |
Invention |
State/Country： |
11[China|beijing] |
IPC： |
C01B 31/02, B82B 3/00 |
Applicant(s)： |
Tsinghua University |
Inventor(s)： |
Zheng Zhi, Yao Yuan, Liu Liang, Fan Shoushan |
Key Words： |
single-wall, carbon nano-tube, growth method |
Abstract： |
The present invention relates to a growth method of a single-walled carbon nano-tube, which includes the following steps: a substrate is provided; an indium-tin-oxide electrode is formed on the substrate, which is 5 to 100 nanometers in thickness; an aluminum transition layer is deposited on the indium-tin-oxide electrode, which is 5 to 40 nanometers in thickness; a catalyst layer is deposited on the aluminum transition layer, which is 3 to 10 nanometers in thickness; the substrate provided with the catalyst layer, the aluminum transition layer and the indium-tin-oxide electrode is placed in the air and heat-treated under the temperature of 300 to 500 DEG C for 10 minutes to 12 hours; the catalyst layer forms oxide particles after annealing; then the substrate is placed in a reaction device with protective gas pumped inside; the substrate is heated to 640 to 900 DEG C under the protection of the protective gas; the mixed gas of carbon source gas and protective gas is pumped into the reaction device, and the substrate is heated to 640 to 900 DEG C and reacted for 30 to 60 minutes, and then the single-walled carbon nano-tube is produced. |
Claim： |
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