Nano level metal telluride preparing process
Title：
Nano level metal telluride preparing process
Application Number：
 02121431
Application Date：
 2002/06/21
Announcement Date：
 2002/12/11
Pub. Date：
Publication Number：
 1384048
Announcement Number：
 1159212
Grant Date：
 2004-7-28
Granted Pub. Date：
 2004-7-28
ApplicationType：
 Invention
State/Country：
 11[China|beijing]
IPC：
 C01B 19/00, C01B 19/04
Applicant(s)：
 Tsinghua Univ.
Inventor(s)：
 Nan Cewen, Deng Yuan, Zhou Xisong
Key Words：
 Nano level, metal telluride, preparing process
Abstract：
 During the preparation of nano-metal telluride, using nitrate or chloride of Bi, Sn or Pb and simple substance Te as raw material, N, N-dimethyl formamide as solvent, the thermoelectric nano-material Pb or Sn doped MxTey (M=Bi, Sn or Pb), Bi2Te3 or Pb Te compound is produced through reaction at 100-180 deg.c. By means of the control of reaction condition, spherical, squared or rod nanometer crystal particle with 100 nm below size may be obtained easily. The Bi2Te3 and PbTe based compound after being sintered are used as room temperature and middle temperature thermoelectric material with highest thermoelectric conversion efficiency separately.
Claim：
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PCT：
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