Micro-machinery switch low stress silicon oxynitride membranes preparation method |
Title： |
| Micro-machinery switch low stress silicon oxynitride membranes preparation method |
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Application Number： |
200710176081 |
Application Date： |
2007/10/19 |
Announcement Date： |
2008/04/09 |
Pub. Date： |
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Publication Number： |
101159199 |
Announcement Number： |
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Grant Date： |
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Granted Pub. Date： |
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ApplicationType： |
Invention |
State/Country： |
11[China|beijing] |
IPC： |
H01H 49/00, B81C 5/00 |
Applicant(s)： |
Tsinghua University |
Inventor(s)： |
Liu Zewen, Hu Guangwei, Liu Litian, Li Zhijian |
Key Words： |
Micro-machinery switch, low stress, silicon oxynitride membranes, preparation method |
Abstract： |
The invention relates to a preparation method of low-stress silicon oxynitride bridge of a micro-mechanical switch, belonging to the technical field of the semiconductor device and IC fabrication. The method comprises preparing a silicon oxynitride medium layer by one-step deposition by adopting plasma-enhanced chemical vapor deposition and adjusting the flow rate of reactive gas under conventional conditions in the step for preparing medium bridge of the micro-mechanical switch; and the reactive gas consists of silicane, ammonia gas, and nitrous oxide. The silicon oxynitride prepared by the method can be used as the medium bridge and can lower the drive voltage of the switch. Simultaneously, the method has simple process and is widely applied. |
Claim： |
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PCT： |
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