Mini-field electron transmitting device |
Title: |
Mini-field electron transmitting device |
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Application Number: |
200610061707 |
Application Date: |
2006/07/19 |
Announcement Date: |
2008/01/23 |
Pub. Date: |
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Publication Number: |
101110306 |
Announcement Number: |
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Grant Date: |
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Granted Pub. Date: |
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ApplicationType: |
Invention |
State/Country: |
11[China|beijing] |
IPC: |
H01J 1/304, H01J 1/46, H01J 7/04, H01J 7/14 |
Applicant(s): |
Tisinghua University |
Inventor(s): |
Chen Pijin, Hu Zhaofu, Liu Liang, Fan Shoushan |
Key Words: |
Mini-field, electron transmitting device |
Abstract: |
The invention relates to a minisize field electron transmission device, which comprises a base; a first insulation layer and a second insulation are positioned at certain distance on the base; an anode electrode layer and a cathode electrode layer are respectively positioned on the first insulation layer and the second insulation layer; a field transmission end in the cathode electrode layer is positioned directly in opposition to the anode electrode layer; inert gas is sealed in the invention and satisfies with the condition formula of: h and lt; Lambadae. Wherein, h refers to the distance between the field transmission end of the cathode electrode layer and the anode electrode layer; Lambada e refers to the free path of electron in the environment of inert gas. |
Claim: |
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Priority: |
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PCT: |
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