Low-temperature sintered sosoloid microwave dielectric ceramic material |
Title： |
| Low-temperature sintered sosoloid microwave dielectric ceramic material |
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Application Number： |
200410103565 |
Application Date： |
2004/12/31 |
Announcement Date： |
2005/06/29 |
Pub. Date： |
2007/02/07 |
Publication Number： |
1631840 |
Announcement Number： |
1298668 |
Grant Date： |
2007-2-7 |
Granted Pub. Date： |
2007-2-7 |
ApplicationType： |
Invention |
State/Country： |
11[China|beijing] |
IPC： |
C04B 35/453, C04B 35/622 |
Applicant(s)： |
Tsinghua University |
Inventor(s)： |
Yue Zhenxing, Wang Jin, Zhao Fei |
Key Words： |
Low-temperature sintered, sosoloid, microwave dielectric, ceramic material |
Abstract： |
The invention relates to a microwave medium ceramics material with high quality factor through low temperature fritting, which belongs to microwave medium material productive technological field. The material is xZno.Nb2O5.mV2O5.nSb2O3 and each content mole number of them is: x is not larger than 55 and not smaller than 50, y is not larger than 49 and not smaller than 35, m not larger than 1.0 and not smaller than 10, n is not larger than 9 and not smaller than, x+y+m+n=100 and m+n is not larger than 10; the fritting temperature for fritting is below 1000deg.C, dielectric constant ¦År is among 22-25 and the value of Q¡Áf (Q is quality factor) is between 34000~102900 GHz; it can be combined with metal electric pole(like silver and copper), especially suitable for preparation of multi-layer microware device such as micro ware wave filter, diplex plate, wire and radio frequency microwave function module and its integration. |
Claim： |
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Priority： |
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PCT： |
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