Large-area heat sink structure for large power semiconductor device |
Title： |
| Large-area heat sink structure for large power semiconductor device |
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Application Number： |
200410009470 |
Application Date： |
2004/08/20 |
Announcement Date： |
2005/03/23 |
Pub. Date： |
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Publication Number： |
1599062 |
Announcement Number： |
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Grant Date： |
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Granted Pub. Date： |
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ApplicationType： |
Invention |
State/Country： |
11[China|beijing] |
IPC： |
H01L 23/34 |
Applicant(s)： |
Tsinghua Univ. |
Inventor(s)： |
Luo Yi, Hao Zhibiao, Tang Guang |
Key Words： |
Large-area, heat sink structure, large power, semiconductor device |
Abstract： |
A large acreage thermolysis structure used in the high-power semiconductor device belongs to the field of preparing the high-power semiconductor device. It adopts the hyperbatic welding method, joints the die with the heat sink with high thermal conductivity through the heat conducting insulation film and also can add heat sink to the substrate of the hyperbatic welding chips to form the double ended thermolysis structure. The invention makes the heat source of the device and the metal salient points form the thermolysis thoroughfare through the heat conducting insulation film in the front of the device, can reduce the thermal resistance of the device to extremely low level, thus avoids the effect of self healing when working in heavy duty and increases the stability and reliability of the device. In addition, the method disclosed by the invention is featured by simple technique and low cost and is adaptable to mass production. |
Claim： |
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Priority： |
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PCT： |
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