Micro or nano structure inertia sensor and its production method |
Title： |
| Micro or nano structure inertia sensor and its production method |
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Application Number： |
200510071148 |
Application Date： |
2005/05/20 |
Announcement Date： |
2006/11/22 |
Pub. Date： |
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Publication Number： |
1865124 |
Announcement Number： |
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Grant Date： |
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Granted Pub. Date： |
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ApplicationType： |
Invention |
State/Country： |
11[China|beijing] |
IPC： |
B81B 3/00, B82B 1/00, G01C 19/00, G01P 15/00 |
Applicant(s)： |
Tsinghua University |
Inventor(s)： |
Ye Xiongying, Tan Miaomiao, Zhou Zhaoying, Wang Xiaohao |
Key Words： |
Micro, nano structure, inertia sensor, production method |
Abstract： |
The invention relates to an inertia sensor with micro nanometer structure. Wherein, it comprises a silicon base and an insulated layer above it; two strip electrodes are at two sides of upper part of insulated layer; 2 groups of resonance beams made from one-dimension nanometer material are arranged between the weight block and the first electrode and the weight block and the second electrode, or one group of resonance beams via the weight block are connected between the first electrode and the second electrode; the resonance beam is fixed at the contact surface between the electrode and the weight block; the weight block is at the center of upper part of insulated layer; the weight block is suspended by the support of resonance beam; the whole base is used as driving electrode; the insulated layer of silicon base has window compress welding disk as the lead-out connector of bottom electrode; the first and second electrodes are connected to the compressing welding disk via lead wires; one-dimension nanometer material can be used as electric lead wire to electrically connect the weight block and electrodes. The invention uses silicon sheet as base material, directionally assembles the one-dimension nanometer material, and micro processes the surface of silicon sheet. |
Claim： |
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Priority： |
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PCT： |
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