Method for producing GaN-based illuminator device and its device structure
Title：
Method for producing GaN-based illuminator device and its device structure
Application Number：
 200510011661
Application Date：
 2005/04/29
Announcement Date：
 2005/12/14
Pub. Date：
Publication Number：
 1707820
Announcement Number：
Grant Date：
Granted Pub. Date：
ApplicationType：
 Invention
State/Country：
 11[China|beijing]
IPC：
 H01L 33/00, H01S 5/00
Applicant(s)：
 Tsinghua Univ.
Inventor(s)：
 Han Yanjun, Luo Yi
Key Words：
 GaN-based, illuminator device, producing method, device structure
Abstract：
 The present invention belongs to the making of GaN-base light emitting device, and features that slots are formed in the substrate material and partial epitaxial layer or in the substrate material only and filled with material possessing heat conductivity higher than that of the substrate material to lower the heat resistance effectively and to raise the performance of the LED device including light emitting efficiency, etc. The present invention obtains high performance GaN-base light emitting device through eliminating the demerits of low heat conductivity of the substrate material, mismatching in heat expansion coefficient, etc.
Claim：
Priority：
PCT：
LegalStatus：

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2008-4-17
  Selected patents owned by Tsinghua University filed in 2005 are loaded.
2008-3-31
  Selected patents owned by Tsinghua University filed in 2006 and 2007 are load.







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