Nanometer SiC/ Bi2Te3 base thermoelectric material preparation method |
Title： |
| Nanometer SiC/ Bi2Te3 base thermoelectric material preparation method |
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Application Number： |
200510130794 |
Application Date： |
2005/12/30 |
Announcement Date： |
2006/07/26 |
Pub. Date： |
2007/11/28 |
Publication Number： |
1807666 |
Announcement Number： |
100351409 |
Grant Date： |
2007-11-28 |
Granted Pub. Date： |
2007-11-28 |
ApplicationType： |
Invention |
State/Country： |
11[China|beijing] |
IPC： |
C22C 1/05, C22C 29/00, B22F 9/04, B22F 3/105 |
Applicant(s)： |
University of Science and Technology Beijing |
Inventor(s)： |
Zhang Boping, Li Jingfeng, Zhao Lidong, Liu Jing |
Key Words： |
Nanometer, SiC/ Bi2Te3 base, thermoelectric material, preparation method |
Abstract： |
The invention discloses a pyroelectric material preparing method of nanometer SiC/Bi2Te3 radical in the energy resource and material technique domain, which comprises the following steps: using high-purity Bi powder and nanometer SiC as raw material; compounding Bi2Te3 chemical compound superfine powder by mechanical alloy; using discharge plasma sintering process to sinter Bi2Te3 predecessor fines of doping nanometer SiC granule for block. The job step is composed of deploying raw material, mechanical alloying, discharge plasma sintering, example detecting. The art work is easy; time of compounding chemical compound is short and temperature of sintering is low. |
Claim： |
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Priority： |
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PCT： |
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LegalStatus： |
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